Memory IC W988D6FBGX7E product image

W988D6FBGX7E

  • Description:IC DRAM 256MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tray

SKU:9cf6ca4b06e5 Category: Brand:

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W988D6FBGX7E is listed in the Memory IC range at ChipApex. The manufacturer field lists Winbond Electronics. Its product description is IC DRAM 256MBIT PAR 54VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for W988D6FBGX7E

  • Description:IC DRAM 256MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPSDR
  • Memory Size:256Mbit
  • Memory Organization:16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-25°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:54-TFBGA
  • Supplier Device Package:54-VFBGA (8x9)
  • Access Time:5.4 ns

Memory IC datasheet and documents for W988D6FBGX7E

W988D6FBGX7E

Memory IC Overview

The Winbond W988D6FBGX7E is a 256Mb Low Power SDRAM (LPSDR) organized as 4 banks of 4,194,304 words by 16 bits. It operates at a maximum clock frequency of 133MHz with a 1.8V power supply range of 1.7V to 1.95V for both VDD and VDDQ. The device utilizes a 54-ball VFBGA package and supports an extended operating temperature range from -25°C to +85°C.

Memory IC Feature Summary

  • Supports low power functions including Partial Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh (ATCSR), Deep Power Down Mode, and Clock Suspend Mode.
  • Features programmable output buffer driver strength and CAS Latency options of 2 or 3.
  • Supports burst lengths of 1, 2, 4, 8, and full page with selectable sequential or interleave addressing modes.

Memory IC Applications

  • 2.5G / 3G cellular phones
  • Personal Digital Assistants (PDA)
  • Digital still cameras
  • Mobile game consoles
  • Handheld applications requiring large memory density

Memory IC Procurement Notes

Verify the specific suffix 'X7E' confirms the 133MHz speed grade and -25°C to +85°C industrial temperature rating. Ensure the design requires the 16-bit I/O width compatible with the 54-ball VFBGA package. Confirm that the system voltage rails strictly adhere to the 1.7V to 1.95V specification for both core and I/O supplies.

Memory IC Selection Notes

Select this component when a 256Mb capacity is required in a compact 54-ball footprint. It is suitable for battery-powered mobile devices where low power consumption features like PASR and ATCSR are critical. Choose this part over the X6 variant if the application timing budget accommodates the 133MHz maximum frequency rather than 166MHz.

Memory IC Part Context

This device belongs to the Winbond W988D6FB series of Mobile LPSDR memories. It shares architectural similarities with the W988D2FB series but differs in I/O width and package options. The family is designed to offer lower power consumption compared to standard SDRAM while maintaining synchronous performance for mobile multimedia applications.

Memory IC Replacement Considerations

The W988D6FBGX6E is a pin-compatible alternative offering a higher 166MHz speed grade within the same -25°C to +85°C temperature range. Designers must verify if the system clock requirements can accommodate the slower 133MHz limit of the GX7E model before substituting.

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