Memory IC W989D6DBGX6E TR product image

W989D6DBGX6E TR

$2.18
  • Description:IC DRAM 512MBIT LVCMOS 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)

SKU:1a4c089e8554 Category: Brand:

  
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W989D6DBGX6E TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Winbond Electronics. Its product description is IC DRAM 512MBIT LVCMOS 54VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for W989D6DBGX6E TR

  • Description:IC DRAM 512MBIT LVCMOS 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPSDR
  • Memory Size:512Mbit
  • Memory Organization:32M x 16
  • Memory Interface:LVCMOS
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-25°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:54-TFBGA
  • Supplier Device Package:54-VFBGA (8x9)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for W989D6DBGX6E TR

W989D6DBGX6E TR

Memory IC Overview

The Winbond W989D6DBGX6E TR is a 512Mb Low Power SDRAM organized as 32M x 16 bits. It operates at a maximum clock frequency of 166MHz with a supply voltage range of 1.7V to 1.95V for both VDD and VDDQ. The device utilizes a 54-ball VFBGA package and supports an industrial operating temperature range from -40°C to +85°C. Key features include programmable partial array self-refresh, automatic temperature compensated self-refresh, and deep power-down mode.

Memory IC Feature Summary

  • Supports low power functions including Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).
  • Features Deep Power Down Mode (DPD) and Power Down Mode for enhanced energy efficiency in battery-powered applications.
  • Provides programmable output buffer driver strength and supports CAS Latencies of 2 and 3.

Memory IC Applications

  • 2.5G / 3G cellular phones
  • Personal Digital Assistants (PDA)
  • Digital still cameras
  • Mobile game consoles
  • Handheld applications requiring large memory density

Memory IC Procurement Notes

Verify the specific ordering suffix 'E' confirms the extended temperature range (-25°C to +85°C) rather than the industrial grade (-40°C to +85°C). Confirm the 'TR' designation indicates tape and reel packaging. Cross-reference the datasheet revision A01-002 for accurate electrical characteristics and timing parameters before finalizing procurement specifications.

Memory IC Selection Notes

Select this component when designing mobile systems requiring 512Mb capacity with a 16-bit interface width. Ensure the design accommodates the 1.8V LVCMOS bus interface and the 54-ball VFBGA footprint. Consider the 166MHz speed grade if high bandwidth is necessary within the low-power constraints of the LPSDR architecture.

Memory IC Part Context

This part belongs to the W989D6DB series of Mobile LPSDR devices. It shares architectural similarities with the W989D2DB series but differs in organization and package type. The x16 configuration distinguishes it from the x32 variants, making it suitable for specific board layout and pin-count constraints in compact mobile electronic designs.

Memory IC Replacement Considerations

The W989D6DBGX6I TR serves as a direct functional substitute with identical electrical specifications but offers an expanded industrial temperature range (-40°C to +85°C).

W989D6DBGX6E TRW989D6DBGX6E TR
$2.18
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