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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 91A TO-247-3
- Series：-
- Mfr：WeEn Semiconductors
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：91 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：278 W
- Switching Energy：1.7mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：66ns/163ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：105 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The WG50N65DHWQ is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the WNSC2D series, manufactured by WeEn Semiconductors. It utilizes Fine Trench Field-stop technology to optimize conduction and switching losses. The device is housed in a TO-247-3 package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 91 A at 25°C. The typical collector-emitter saturation voltage is 1.65 V, with a gate-emitter voltage range of -20 V to +20 V. Maximum power dissipation is rated at 278 W, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Fine Trench Field-stop IGBT technology for optimized efficiency
- Single configuration in a robust TO-247-3 package
- High thermal stability with extended operating temperature range
Applications
- Induction heating systems
- Switched-mode power supplies
- Motor control applications
Procurement Notes
This component is officially designated as End-of-Life (EOL). Discontinuation notifications have been issued by the manufacturer. Availability is restricted to existing stock or secondary market sources. Verification of authenticity and storage history is critical due to the discontinued status. Buyers should confirm the specific manufacturing date code and ensure compliance with RoHS and REACH requirements before procurement.
Selection Notes
Designers requiring this specific part number must account for its discontinuation status. Alternative components within the same WNSC2D series or comparable 650V IGBTs should be evaluated for pin compatibility and electrical equivalence. The transition to a replacement device requires re-validation of thermal management solutions and gate drive characteristics to maintain system performance and reliability standards.
Part Context
The WG50N65DHWQ belongs to the WNSC2D product family, which focuses on high-efficiency power switching solutions. This series integrates advanced trench field-stop technology to reduce both conduction and switching losses. The TO-247-3 packaging provides a balance between high current handling capabilities and ease of integration into standard printed circuit board layouts for industrial power electronics.
Replacement Considerations
The datasheet references WG50N65HFR1Q as a related variant. Both devices share similar electrical specifications but differ in package type; the HFR1Q uses a TO-247-4L package, while the DHWQ uses TO-247-3. Pinout compatibility must be verified before substitution.
