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WNS20S100CXQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARR SCHOTT 100V 10A TO220F. Review the specifications below when checking this part for your BOM.
The WNS20S100CXQ is a Schottky diode manufactured by WeEn Semiconductors, housed in a D2PAK-3 (TO-263-3) surface-mount package. It features a dual anode common cathode configuration with silicon technology. The device supports a maximum repetitive reverse voltage of 100 V and an average forward current of 10 A. Key electrical parameters include a forward voltage of 890 mV, a peak forward surge current of 132 A, and a reverse leakage current of 50 uA. The component operates within a temperature range up to +150°C.
Verify the specific suffix 'Q' against official manufacturer documentation to confirm any distinct marking or packaging variations compared to standard variants. Ensure compatibility with RoHS and REACH requirements as specified in the datasheet. Confirm the exact reel quantity and tape specifications required for automated assembly processes before finalizing procurement orders.
Select this component for applications requiring a 100 V rating and 10 A continuous current capability in a compact surface-mount form factor. The low forward voltage characteristic aids in reducing conduction losses. Evaluate thermal management needs given the 150°C junction temperature limit and ensure the PCB layout supports adequate heat dissipation for the TO-263-3 package.
This part belongs to the WeEn Semiconductors Schottky diode and rectifier product line. It utilizes silicon technology and is designed for general-purpose power management applications. The D2PAK-3 package provides a balance between current handling capacity and board space efficiency, suitable for industrial and consumer electronics power stages.
Cross-reference with other 100 V, 10 A dual Schottky diodes in the TO-263-3 package from various manufacturers. Verify pinout compatibility and thermal resistance values to ensure direct replacement feasibility without circuit redesign.
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