WNSC2D04650Q

Single Diodes Overview

The WNSC2D04650Q is a Silicon Carbide (SiC) Schottky diode manufactured by WeEn Semiconductors. It features a single diode configuration housed in a TO-252-3 (DPAK) surface-mount package. The device supports a maximum repetitive reverse voltage of 650 V and an average forward current of 4 A. Key electrical parameters include a typical forward voltage of 1.7 V at 4 A, a maximum reverse leakage current of 20 µA at 650 V, and a zero reverse recovery time. It operates within a junction temperature range of -55°C to +175°C.

Single Diodes Feature Summary

• Utilizes Silicon Carbide technology for superior high-temperature durability and switching efficiency.
• Features zero reverse recovery time, eliminating switching losses associated with minority carrier storage.
• Designed for high-frequency switched-mode power supply applications requiring low thermal resistance.

Single Diodes Applications

• High-frequency switched-mode power supplies
• DC-DC converter circuits
• Industrial power management systems

Single Diodes Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact packaging and marking variations. Confirm RoHS compliance status and lead-free conversion dates via the latest datasheet or product change notifications. Ensure the selected variant matches the required DPAK footprint and thermal characteristics for the target application design.

Single Diodes Selection Notes

Select this component for designs prioritizing high-temperature operation up to 175°C and minimal switching losses. The 650V rating suits medium-voltage DC-DC conversion stages. Evaluate the 4A current capability against peak load requirements and ensure adequate PCB copper area for thermal dissipation given the TO-252-3 package constraints.

Single Diodes Part Context

This part belongs to the WNSC series of Silicon Carbide Schottky diodes from WeEn Semiconductors. The series is engineered for high-efficiency power conversion, offering advantages over traditional silicon rectifiers in terms of speed and thermal performance. It complements other components in modern power electronics architectures focused on miniaturization and energy savings.

Single Diodes Replacement Considerations

Cross-reference with equivalent SiC Schottky diodes in the DPAK package offering 650V/4A ratings. Verify pinout compatibility and thermal resistance specifications before substitution. Check for any changes in forward voltage characteristics that might impact overall system efficiency.