XN0111100L

Overview

The XN01111 is a composite transistor featuring two PNP elements integrated into a single SC-74A (Mini5-G1) package. It incorporates built-in bias resistors to reduce mounting area and assembly costs by half compared to discrete components. The device supports a collector-emitter voltage of -50 V, a maximum collector current of -100 mA, and a total power dissipation of 300 mW at 25°C. Key electrical characteristics include a DC current gain (hFE) of 35 at -5 mA, a saturation voltage of -0.25 V at -10 mA, and an input resistance of 10 kOhms with ±30% tolerance.

Feature Summary

• Two emitter-coupled transistors with built-in resistors incorporated into one package
• Reduction of mounting area and assembly cost by half compared to discrete equivalents
• Designed for switching and digital circuits

Applications

• Switching circuits
• Digital logic circuits

Procurement Notes

Verify the specific lifecycle status directly with Panasonic Industry, as the datasheet indicates maintenance or discontinuation plans may apply. Confirm RoHS compliance details for the specific manufacturing batch. Ensure the SC-74A package dimensions align with the target PCB footprint before finalizing procurement orders.

Selection Notes

Select this component when space-saving dual PNP configurations are required for digital switching applications. The integrated resistor network simplifies circuit design by eliminating external biasing components. Verify that the -50 V breakdown voltage and -100 mA current limits meet the system requirements.

Part Context

This part belongs to the XN series of composite transistors from Panasonic Electronic Components. It serves as a dual-element alternative to discrete bipolar junction transistors, offering a compact solution for applications requiring multiple PNP switches with shared biasing networks in a small surface-mount package.

Replacement Considerations

The datasheet identifies UNR2111 (UN2111) as the basic part number equivalent. Designers should verify pinout compatibility and electrical parameter matching when substituting with other dual PNP composite transistors.