XN0111300L

Overview

The XN01113 is a composite silicon PNP epitaxial planar transistor designed for switching and digital circuits. It integrates two emitter-coupled transistors with built-in resistors into a single SC-74A Mini5-G1 package, reducing mounting area by half compared to discrete components. Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 300 mW at 25°C. The device features a minimum forward current transfer ratio (hFE) of 80 and an input resistance of 47 kΩ.

Feature Summary

• Integrates two emitter-coupled transistors with built-in bias resistors into a single package
• Reduces mounting area and assembly costs by half compared to discrete equivalents
• Designed specifically for high-speed switching and digital logic applications

Applications

• Switching circuits in general electronic equipment
• Digital logic interface circuits
• Office equipment and communications equipment signal processing

Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the SC-74A Mini5-G1 package dimensions match your PCB footprint requirements. Ensure design compliance with absolute maximum ratings to prevent device failure during transient states such as power-on or mode-switching.

Selection Notes

Select the XN01113 when space constraints require replacing two discrete transistors with a single surface-mount component. Verify that the -50V collector-emitter voltage rating meets the circuit's operating voltage requirements. Consider the 47kΩ built-in input resistance for base drive calculations. This part serves as a direct functional replacement for the UNR2113 configuration within the specified electrical limits.

Part Context

The XN01113 belongs to Panasonic's composite transistor family, which consolidates multiple semiconductor elements to optimize board space. It is functionally equivalent to using two UNR2113 units but offers a more compact solution. The device utilizes silicon epitaxial planar technology to ensure stable performance across the specified temperature range of -55°C to +150°C storage.

Replacement Considerations

The datasheet identifies the UNR2113 as the conventional discrete equivalent. No other specific substitute part numbers are documented in the provided source material.