XN0111400L

Overview

The XN01114 is a composite transistor device manufactured by Panasonic Electronic Components, designed for switching and digital circuits. It integrates two PNP epitaxial planar transistors into a single SC-74A (Mini5-G1) package with built-in bias resistors. The component supports a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA per element. Total power dissipation is rated at 300 mW at 25°C ambient temperature. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 80 at -5 mA/-10 V, a transition frequency (fT) of 80 MHz, and an input resistance of 10 kΩ.

Feature Summary

• Integrates two emitter-coupled PNP transistors with built-in resistors into one package to reduce mounting area and assembly costs.

Applications

• Switching circuits
• Digital logic circuits

Procurement Notes

Verify the specific lifecycle status before procurement as this component may be subject to maintenance or discontinuation plans. Consult official manufacturer channels for the most up-to-date Product Standards and availability information. Ensure compliance with RoHS directives if required for the target application environment.

Selection Notes

Select this component when space-saving integration of dual PNP transistors is required for standard electronic equipment. Verify that the -50 V voltage rating and -100 mA current capacity align with the circuit design requirements. Consider the 10 kΩ internal resistance values for proper biasing in digital switching applications.

Part Context

This part belongs to the XN series of composite transistors from Panasonic Electronic Components. These devices are silicon-based NPN or PNP epitaxial planar types intended for general-purpose electronic equipment such as office machines, communications gear, and measuring instruments.

Replacement Considerations

The datasheet identifies UNR2114 (UN2114) as the basic part number equivalent. Designers should verify pinout compatibility and electrical parameter matching when substituting with other dual PNP composite transistor packages.