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The Panasonic XN0111F is a composite transistor device designed for switching and digital circuits. It integrates two PNP elements into a single SC-74A package, functioning as emitter-coupled transistors with built-in bias resistors. The component supports a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. Key electrical characteristics include a forward current transfer ratio (hFE) of 30 at -5 mA and an input resistance of 4.7 kΩ. The device operates within a temperature range of -55°C to +150°C and complies with the RoHS Directive.
Verify the specific lifecycle status of the XN0111F before procurement, as the datasheet indicates potential maintenance or discontinuation stages. Consult official Panasonic channels for the most up-to-date Product Standards to ensure specifications meet final design requirements. Confirm compliance with export control regulations if applicable to your region.
Select this component when space reduction and simplified assembly are priorities in digital logic designs. Ensure the operating environment stays within the specified -55°C to +150°C storage range. Verify that the -50 V voltage rating and -100 mA current limits accommodate the circuit's peak transient conditions without exceeding absolute maximum ratings.
The XN0111F belongs to Panasonic's series of composite transistors, which consolidate multiple semiconductor functions into compact packages. This specific model utilizes silicon PNP epitaxial planar technology. It serves as a direct replacement equivalent for two UNR211F discrete transistors, offering a streamlined solution for standard industrial and consumer electronics manufacturing.
The XN0111F is functionally equivalent to two UNR211F discrete transistors. When replacing discrete components, verify that the PCB footprint accommodates the SC-74A package dimensions. Ensure the new design accounts for the integrated resistor values and internal connection topology defined in the datasheet.