XN0111H00L

Overview

The XN0111H is a silicon PNP epitaxial planar composite transistor designed for switching and digital circuits. It integrates two emitter-coupled transistors with built-in resistors into a single SC-74A (Mini5-G1) package, reducing mounting area and assembly costs by half compared to discrete components. The device features a collector-emitter voltage of -50 V, a collector current rating of -100 mA, and a total power dissipation of 300 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) of 30 at -5 mA, an input resistance of 2.2 kΩ, and a transition frequency of 80 MHz.

Feature Summary

• Integrates two emitter-coupled transistors with built-in bias resistors into a single package
• Reduces mounting area and assembly costs by half compared to using separate discrete components
• Designed specifically for switching and digital circuit applications

Applications

• Switching circuits
• Digital logic circuits

Procurement Notes

Verify the current lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Ensure that the specific ordering suffix matches the required packaging format. Confirm compliance with RoHS directives if applicable to the target market. Request the most up-to-date product standards during the final design stage to guarantee specification accuracy.

Selection Notes

Select this component when space constraints require integrating multiple transistor functions into a compact footprint. The built-in resistor configuration simplifies circuit design by eliminating external biasing components. Verify that the -50 V voltage rating and -100 mA current capacity meet the specific load requirements of the switching application. Consider the thermal performance and total power dissipation limits under expected operating ambient temperatures.

Part Context

This part belongs to Panasonic's composite transistor family, which consolidates multiple semiconductor elements into single packages to optimize board space. The XN0111H serves as a direct replacement equivalent for configurations previously requiring two UNR211H discrete transistors. This integration strategy supports cost reduction in mass production while maintaining reliable switching performance for standard electronic equipment.

Replacement Considerations

The datasheet identifies the UNR211H as the conventional discrete equivalent. Two UNR211H units are functionally replaced by one XN0111H. Verify pinout compatibility and ensure that the integrated resistor values match the original discrete circuit requirements before substitution.

FAQ

What is the internal structure of the XN0111H?

It contains two silicon PNP epitaxial planar transistors with built-in bias resistors incorporated into a single SC-74A package.

What is the maximum collector current rating?

The absolute maximum rating for collector current is -100 mA at an ambient temperature of 25°C.

How does the input resistance vary?

The nominal input resistance is 2.2 kΩ, with a tolerance range specified from -30% to +30%.