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The XN01211 is a composite silicon NPN epitaxial planar transistor designed for switching and digital circuits. It integrates two emitter-coupled transistors with a built-in bias resistor into a single SC-74A (Mini5-G1) package. The device features a collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 300 mW at 25°C. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 35, an input resistance of 10 kΩ, and a transition frequency of 150 MHz.
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status as required by project standards. Check the manufacturer's official website for the latest lifecycle stage information, as this component may be subject to maintenance or discontinuation plans.
Select this component when space-saving integration of dual transistors is required. Ensure the design operates within the 50 V collector-emitter voltage limit and 100 mA current rating. Verify that the 10 kΩ internal bias resistor meets the circuit drive requirements. Consider the SC-74A package dimensions for PCB layout constraints.
This part belongs to Panasonic's composite transistor series, which combines multiple discrete functions into a single surface-mount package. The XN01211 specifically utilizes an emitter-coupled configuration with an integrated bias network, serving as a compact alternative to using separate discrete transistors and resistors in digital logic applications.
The datasheet identifies UNR2211 as the conventional equivalent part number. Designers should verify pinout compatibility and electrical parameter tolerances before substituting with other composite transistor families.