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The XN0150900L is a dual NPN pre-biased transistor array manufactured by Panasonic Industry. It operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA. The device features an integrated base resistor of 10kΩ, providing a DC current gain (hFE) of at least 160 at 5mA and 10V. Key electrical specifications include a transition frequency of 150MHz, a saturation voltage of 250mV at 300µA base and 10mA collector current, and a maximum power dissipation of 300mW. The component utilizes a MINI6-G1 surface-mount package.
Verify the specific manufacturer designation as Panasonic Industry rather than Panasonic Electronic Components when sourcing. Confirm the package type matches the MINI6-G1 specification to ensure mechanical compatibility. Check for end-of-life status or obsolescence notices prior to finalizing procurement plans.
Select this component when a dual NPN pre-biased solution is required within a 50V rating. Ensure the application current remains below 100mA and thermal constraints allow for 300mW dissipation. Verify that the 10kΩ internal base resistance aligns with the driving source impedance requirements.
This part belongs to the XN0421 series family of pre-biased transistor arrays. It shares functional similarities with other models in the lineup but differs in specific pin configurations or internal resistor values depending on the suffix. It serves as a compact alternative to discrete BJT and resistor combinations.
Public confirmed substitute: IMH3AT110 from Rohm Semiconductor.