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The Panasonic XN04112 is a composite transistor consisting of two silicon PNP epitaxial planar elements integrated into a single SC-74 Mini6-G1 package. It functions as a dual digital transistor with built-in resistors, replacing two UNR2112 units. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a collector current (IC) of -100 mA at 25°C. The device features an input resistance (R1) of 22 kΩ with a ±30% tolerance and a forward current transfer ratio (hFE) of 60. Total power dissipation is rated at 300 mW, with a junction temperature limit of 150°C.
Verify the specific lifecycle status directly with Panasonic or authorized distributors before procurement. The product documentation indicates maintenance or discontinuation stages may apply. Confirm that the latest Product Standards match your design requirements, as specifications are subject to change without notice. Ensure compliance with RoHS directives applicable to your region.
Select this component when space constraints require replacing two discrete transistors with one unit. The 22 kΩ internal resistor value suits standard TTL/CMOS interface levels. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements. Consider the SC-74 package dimensions for PCB layout compatibility.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. It serves as a direct replacement for two UNR2112 discrete transistors. The device utilizes silicon PNP epitaxial planar technology optimized for low-power switching and digital signal processing tasks in consumer and industrial electronics.
The datasheet explicitly identifies the UNR2112 as the conventional equivalent part number. Designers should verify pinout compatibility between the SC-74 Mini6-G1 package and alternative dual-transistor solutions if sourcing from other manufacturers.