XN0411400L

Overview

The XN04114 is a composite device containing two Silicon PNP epitaxial planar transistors with built-in bias resistors in an SC-74 Mini6-G1 package. It operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA per element. The total power dissipation is rated at 300 mW. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 80, a transition frequency of 80 MHz, and an input resistance of 10 kΩ with a resistance ratio of 0.21.

Feature Summary

• Integrates two emitter-coupled transistors with built-in resistors into a single package to reduce mounting area and assembly costs.

Applications

• Switching circuits
• Digital logic circuits

Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the SC-74 package dimensions and pinout match the design requirements for the target application.

Selection Notes

Select this component when space-saving dual transistor configurations are required for standard digital switching applications. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding total power dissipation and junction temperature limits during design.

Part Context

This part belongs to Panasonic's composite transistor series designed for general-purpose electronic equipment. It serves as a direct replacement for two discrete UNR2114 transistors, offering a simplified layout solution for standard office equipment, communications gear, and measuring instruments.

Replacement Considerations

Officially documented equivalent: UNR2114 x 2 elements.