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The XN04130 is a silicon PNP epitaxial planar composite transistor designed for low-frequency output amplification. It integrates two elements into one package, specifically transistors with built-in resistors, to reduce mounting area and assembly costs by half. The device operates within an ambient temperature range of -55°C to +150°C storage and up to 150°C junction temperature. Key electrical characteristics include a collector-emitter voltage of -15V, a continuous collector current of -0.5A, and a peak collector current of -1A. Total power dissipation is rated at 300mW. The component utilizes the EIAJ SC-74 Mini6-G1 package.
Verify the specific ordering suffix against official Panasonic documentation to ensure correct packaging and variant selection. Confirm compliance with RoHS Directive (EU 2002/95/EC) requirements relevant to your region. Check the manufacturer's website for the latest maintenance or discontinuation status before finalizing procurement plans.
Select this component when space reduction and cost efficiency are priorities for low-frequency amplification stages. Ensure the design accounts for the -15V maximum voltage ratings and 300mW power dissipation limits. Consider the integrated resistor configuration which simplifies biasing networks compared to discrete transistor solutions.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. These devices typically combine multiple semiconductor elements within a single surface-mount package to enhance circuit density. The XN04130 specifically serves as a PNP counterpart in amplifier designs requiring compact form factors.
The datasheet identifies UNR1130 (UN1130) as the conventional equivalent part number. Verify pinout compatibility and electrical parameters if substituting with other PNP composite transistors from different manufacturers.