XN0413000L

XN0413000L

  • Description:TRANS PREBIAS DUAL PNP MINI6
  • Series:-

SKU:5468e606daec Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS DUAL PNP MINI6
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):500mA
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 500mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:130MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:MINI6-G1

Download product information

XN0413000L

Overview

The XN04130 is a silicon PNP epitaxial planar composite transistor designed for low-frequency output amplification. It integrates two elements into one package, specifically transistors with built-in resistors, to reduce mounting area and assembly costs by half. The device operates within an ambient temperature range of -55°C to +150°C storage and up to 150°C junction temperature. Key electrical characteristics include a collector-emitter voltage of -15V, a continuous collector current of -0.5A, and a peak collector current of -1A. Total power dissipation is rated at 300mW. The component utilizes the EIAJ SC-74 Mini6-G1 package.

Feature Summary

  • Integrates two elements into a single package to minimize board space and assembly expenses
  • Designed specifically for low-frequency output amplification applications

Applications

  • Low-frequency output amplification circuits
  • General electronic equipment such as office and communications devices
  • Measuring instruments and household appliances

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to ensure correct packaging and variant selection. Confirm compliance with RoHS Directive (EU 2002/95/EC) requirements relevant to your region. Check the manufacturer's website for the latest maintenance or discontinuation status before finalizing procurement plans.

Selection Notes

Select this component when space reduction and cost efficiency are priorities for low-frequency amplification stages. Ensure the design accounts for the -15V maximum voltage ratings and 300mW power dissipation limits. Consider the integrated resistor configuration which simplifies biasing networks compared to discrete transistor solutions.

Part Context

This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. These devices typically combine multiple semiconductor elements within a single surface-mount package to enhance circuit density. The XN04130 specifically serves as a PNP counterpart in amplifier designs requiring compact form factors.

Replacement Considerations

The datasheet identifies UNR1130 (UN1130) as the conventional equivalent part number. Verify pinout compatibility and electrical parameters if substituting with other PNP composite transistors from different manufacturers.

XN0413000LXN0413000L

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