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The XN04210 is a composite transistor consisting of two silicon NPN epitaxial planar elements integrated into a single EIAJ SC-74 Mini6-G1 package. It incorporates built-in resistors to reduce mounting area and assembly costs. The device features a collector-base voltage (V_CBO) and collector-emitter voltage (V_CEO) of 50 V, with a maximum collector current (I_C) of 100 mA and total power dissipation (P_T) of 300 mW at 25°C. The transition frequency (f_T) is 150 MHz, and the forward current transfer ratio (h_FE) ranges from 160 to 460 at I_C = 5 mA. The internal connection utilizes pin 1 and 4 as collectors, pins 2 and 5 as bases, and pins 3 and 6 as emitters.
Verify component status via official Panasonic channels before procurement. The datasheet indicates maintenance or discontinuation stages may apply. Confirm RoHS compliance and specific ordering suffixes directly with the manufacturer or authorized distributors to ensure availability and specification accuracy.
Select this component when space-saving dual-transistor configurations are required for digital logic or switching applications. Ensure the design operates within the 50 V voltage limits and 100 mA current ratings. Verify thermal management capabilities for the 300 mW power dissipation in the target ambient temperature range.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. It serves as an alternative to discrete transistor pairs, offering a compact solution for designs requiring multiple NPN switching elements with integrated base resistors.
The datasheet identifies UNR2210 (UN2210) as the conventional part number equivalent. Verify pinout compatibility and electrical characteristics against the original discrete components if substituting.