XN0421100L

Overview

The Panasonic XN0421100L is a composite transistor device containing two NPN elements with built-in bias resistors in a single SC-74 Mini6-G1 package. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per element. The total power dissipation is rated at 300mW, with a transition frequency of 150MHz. Key electrical characteristics include an input resistance (R1) of 10kΩ and a forward current transfer ratio (hFE) minimum of 35 at 5mA. This component is designed for switching and digital circuits.

Feature Summary

• Integrates two emitter-coupled transistors with built-in resistors into one package to reduce mounting area and assembly costs.

Applications

• Switching circuits
• Digital logic circuits

Procurement Notes

Verify the specific lifecycle status of the XN0421100L directly with Panasonic Industry before procurement, as components may be subject to planned maintenance or discontinuation. Confirm that the SC-74 Mini6-G1 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS Directive standards if required by your manufacturing specifications.

Selection Notes

Select this component when space-saving integration of dual NPN transistors with fixed bias ratios is required. Verify that the 10kΩ base resistor value suits your drive circuit design. Consider the 300mW total power dissipation limit and ensure adequate thermal management for the intended operating ambient temperature range.

Part Context

The XN0421100L belongs to the Panasonic XN series of composite transistors. These devices are silicon NPN epitaxial planar types specifically engineered for high-density applications. The part number indicates a dual-element configuration within a compact surface-mount package, serving as a consolidated alternative to discrete transistor pairs.

Replacement Considerations

Publicly confirmed substitute part numbers for the XN0421100L were not found in the provided documentation. Consult manufacturer catalogs for equivalent SC-74 packaged dual NPN composite transistors with similar 10kΩ bias resistor configurations.

FAQ

What is the internal connection configuration of the XN0421100L?

The device contains two independent NPN transistors (Tr1 and Tr2), each with a built-in base resistor. Pin 1 and 4 are collectors, pins 2 and 5 are bases, and pins 3 and 6 are emitters.

What is the typical resistance ratio between R1 and R2?

The resistance ratio R1/R2 has a typical value of 1.0, with a guaranteed range between 0.8 and 1.2.

What is the maximum collector-base cutoff current?

The collector-base cutoff current (ICBO) is specified as a maximum of 0.1 µA when VCB is 50V and IE is 0.