XN0421200L

Overview

The Panasonic XN04212 is a composite transistor featuring two silicon NPN epitaxial planar elements integrated into a single SC-74 Mini6-G1 package. It incorporates built-in resistors, functioning as two UNR2212 units in one component to reduce mounting area and assembly costs. The device supports a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 300 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) of 60 at IC = 5 mA, a transition frequency (fT) of 150 MHz, and an input resistance of 22 kΩ with ±30% tolerance.

Feature Summary

• Dual-element integration within a single package for space-saving design
• Built-in base resistors eliminate external components
• High-speed switching capability with 150 MHz transition frequency

Applications

• General electronic equipment circuits
• Office equipment logic interfaces
• Communications equipment signal processing
• Measuring instruments control logic

Procurement Notes

Verify the current lifecycle status directly through official Panasonic channels before procurement, as this product may be subject to maintenance or discontinuation plans. Confirm that the specific package marking symbol '8R' matches your schematic requirements. Ensure compliance with RoHS directives applicable to your region. Request the latest Product Standards document during final design stages to guarantee specification accuracy.

Selection Notes

Select this component when dual NPN switching functions are required in a compact footprint. The built-in 22 kΩ resistors simplify biasing networks compared to discrete transistors. Verify that the 100 mA collector current and 300 mW power dissipation meet thermal constraints. Consider the SC-74 Mini6-G1 package dimensions for PCB layout compatibility. Ensure operating conditions remain within the specified absolute maximum ratings to prevent device failure.

Part Context

The XN04212 belongs to Panasonic's composite transistor series, designed to replace multiple discrete components. It is functionally equivalent to two UNR2212 transistors packaged together. This series targets applications requiring high-density circuitry and simplified assembly processes. The device utilizes silicon NPN epitaxial planar technology for reliable switching performance in standard digital and analog circuits.

Replacement Considerations

Direct functional equivalents include the UNR2212 used in pairs. Verify pinout compatibility when substituting with other dual-transistor packages. Check if alternative manufacturers offer similar composite transistors with matching resistor values and hFE ranges. Ensure replacement parts support the same SC-74 Mini6-G1 form factor for direct board replacement.