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The XN04213 is a composite transistor featuring two silicon NPN epitaxial planar elements with built-in resistors in one SC-74 Mini6-G1 package. It supports a collector-emitter voltage of 50 V and a collector current of 100 mA, with total power dissipation rated at 300 mW. The device includes an input resistance of 47 kΩ (±30%) and achieves a forward current transfer ratio (hFE) of 80 at 5 mA. Transition frequency reaches 150 MHz, while saturation voltage is 0.25 V under standard test conditions.
Verify the specific ordering suffix against Panasonic's official documentation to confirm packaging format and compliance status. Check the manufacturer's website for the latest lifecycle stage, as this component may be subject to maintenance or discontinuation plans. Ensure the requested variant matches the required RoHS directive compliance before finalizing procurement.
Select this component when space-constrained designs require dual NPN switching functions with integrated base resistors. Verify that the 100 mA collector current and 300 mW power dissipation meet the thermal requirements of the target application. Confirm compatibility with the 50 V maximum voltage ratings for both collector-base and collector-emitter configurations.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. It serves as a modern replacement for discrete dual-transistor assemblies, offering a compact SC-74 footprint. The device is designed specifically for general-purpose electronic equipment, including office machines, communications gear, and household appliances.
The datasheet identifies UNR2213 as the basic part number equivalent for each internal element. Designers replacing discrete components should verify pinout compatibility and ensure the integrated resistor values match the original circuit design requirements.