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The Panasonic XN04312 is a composite transistor housed in an EIAJ SC-74 Mini6-G1 package. It integrates two silicon epitaxial planar transistors: Tr1 (NPN) and Tr2 (PNP). Each element includes a built-in base resistor, with R1 nominally rated at 22 kΩ. The device supports a collector-emitter voltage of 50 V for both polarities and a maximum collector current of 100 mA per transistor. Total power dissipation is limited to 300 mW at 25°C ambient temperature. Transition frequencies are specified at 150 MHz for the NPN section and 80 MHz for the PNP section.
Verify the specific lifecycle status directly with Panasonic Industry before procurement. The datasheet indicates maintenance or discontinuation stages may apply. Confirm that the SC-74 Mini6-G1 package dimensions align with existing PCB footprints. Ensure design margins respect the 300 mW total power dissipation limit across the operating temperature range.
Select this component when space constraints require combining complementary switching elements. The integrated 22 kΩ resistors simplify biasing networks compared to discrete alternatives. Verify that the 50 V rating meets circuit requirements. Consider the transition frequency limits if high-speed signal processing is necessary.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. It serves as a functional equivalent to combinations such as UNR2212 and UNR2112. The device is designed for standard applications including office equipment, communications gear, and measuring instruments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer resources for cross-reference data.