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The Panasonic XN04A88 is a composite transistor housed in an EIAJ SC-74 Mini6-G1 package. It integrates two elements: Tr1, a silicon NPN epitaxial planar transistor (equivalent to 2SD0601A), and Tr2, a silicon PNP epitaxial planar transistor with a built-in resistor (equivalent to UNR211S). The device is designed for low-frequency output amplification. Absolute maximum ratings include a collector-emitter voltage of 50 V for both transistors, a total power dissipation of 300 mW at 25°C, and a junction temperature limit of 150°C. Electrical characteristics specify a forward current transfer ratio (hFE) of 150 to 460 for Tr1 and 20 for Tr2.
Verify the specific ordering suffix '00L' against official Panasonic documentation to confirm availability and lifecycle status. Check the manufacturer's website for the latest product standards, as specifications are subject to change without notice. Ensure compliance with RoHS directives and handle the component according to ESD precautions during storage and mounting.
Select this component when space-saving integration of complementary NPN and PNP switching or amplification stages is required. The built-in resistor on the PNP element simplifies biasing networks. Verify that the 100 mA collector current and 300 mW total power dissipation meet the thermal and load requirements of the target circuit design.
This part belongs to the XN series of composite transistors manufactured by Panasonic Electronic Components. It combines the functions of the 2SD0601A NPN transistor and the UNR211S PNP transistor with a resistor. The Mini6-G1 package provides a compact footprint suitable for surface-mount applications in consumer electronics and industrial control systems.
Direct functional equivalents include the combination of 2SD0601A and UNR211S. Verify pinout compatibility and electrical parameters before substituting with other composite transistors from different manufacturers.