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The XN0F256 is a composite transistor featuring two silicon NPN epitaxial planar elements integrated into a single package. It consists of collector-coupled transistors with built-in resistors, designed for muting applications. The device operates within a collector-emitter voltage range of 20 V and supports a maximum collector current of 600 mA. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 100 to 600 at 50 mA, a transition frequency of 200 MHz, and a low collector-emitter saturation voltage of 80 mV under specified conditions. The internal resistor value is nominally 4.7 kΩ with a ±30% tolerance.
Verify the current lifecycle status before procurement, as the datasheet indicates maintenance or discontinued classifications. Confirm package availability and lead times directly with authorized distributors or Panasonic sales representatives. Ensure compliance with RoHS directives if required for your specific application environment.
Select this component when space constraints require dual-transistor functionality in a minimal footprint. Consider the 4.7 kΩ internal resistor value for biasing requirements. Evaluate the 20 V collector-emitter voltage limit against peak operating voltages. The 600 mA current rating should accommodate load demands without exceeding thermal limits.
The XN0F256 belongs to Panasonic's composite transistor family, specifically designed for applications needing multiple active elements in a single housing. It utilizes an EIAJ SC-74 Mini6-G1 package, providing a compact solution compared to discrete implementations. This integration aids in reducing board space and simplifying assembly processes.
Consult official replacement lists on the Panasonic semiconductor website for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternatives from other manufacturers to ensure compatibility with existing circuit designs.