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The XN0F261 is a composite transistor consisting of two silicon NPN epitaxial planar elements integrated into a single SC-74 Mini6-G1 package. It features collector-coupled transistors with a built-in resistor, designed for muting applications. The device operates with a maximum collector-emitter voltage of 20 V and a collector current of 600 mA. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 100 to 600 at IC = 50 mA, and an input resistance of 3.3 kΩ ±30%. Transition frequency is specified at 200 MHz under defined conditions.
Verify the current lifecycle status on the manufacturer's official website before procurement, as this product may be subject to maintenance or discontinuation plans. Confirm that the latest Product Standards match design requirements. Ensure compliance with export control laws if applicable. Check for specific handling instructions regarding shelf life and damp-proof packing conditions prior to use.
Select this component when space-saving dual-transistor solutions with integrated biasing are required. Verify that the 20 V collector-emitter voltage and 600 mA current ratings suit the target application. Consider the 3.3 kΩ internal resistor value for circuit design compatibility. Ensure operation remains within the 300 mW total power dissipation limit across the specified temperature range.
This component belongs to Panasonic's composite transistor series, specifically designed to replace multiple discrete components. It utilizes the EIAJ SC-74 Mini6-G1 surface-mount package. The device complies with the RoHS Directive (EU 2002/95/EC). It is intended for standard applications rather than specialized high-reliability sectors like aerospace or medical life support systems without prior consultation.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for alternative recommendations if this component is discontinued or unavailable.