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The XP0111300L is a composite transistor featuring two silicon PNP epitaxial planar elements integrated into a single SMini5-G1 package. It incorporates built-in bias resistors to reduce mounting area and assembly costs. Key electrical parameters include a collector-emitter voltage of -50V, a maximum collector current of -100mA, and a total power dissipation of 150mW at 25°C. The device exhibits a transition frequency of 80MHz and a typical DC current gain (hFE) of 80 at -5mA/-10V. Internal connection utilizes pin 2 as the common emitter, with pins 1 and 3 serving as bases for Tr1 and Tr2 respectively.
Verify component status before procurement as this part may be discontinued or in maintenance phase. Confirm RoHS compliance requirements against EU Directive 2002/95/EC. Ensure design specifications align with absolute maximum ratings to prevent failure. Consult official Panasonic documentation for the most up-to-date product standards and lifecycle information prior to finalizing purchasing decisions.
Select this component for applications requiring dual PNP transistors with integrated biasing in compact designs. Verify that the -50V voltage rating and -100mA current capacity meet circuit demands. Consider the SMini5-G1 package dimensions for PCB layout constraints. Evaluate thermal performance against the 150mW power dissipation limit under expected operating conditions.
The XP0111300L belongs to the XP01113 series of composite transistors manufactured by Panasonic Electronic Components. This series is designed for digital circuit applications where space efficiency and simplified assembly are priorities. The component integrates two emitter-coupled transistors with built-in resistors into a single surface-mount package.
Direct substitutes should match the PNP type, -50V rating, and SMini5-G1 package. Verify equivalent hFE and saturation voltage characteristics. Check availability of alternative composite transistor packages if physical footprint changes are permissible.