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The XP04212L is a dual NPN pre-biased transistor array in an SMini6-G1 package. It integrates two transistors with built-in base resistors to reduce mounting area and assembly costs. Key electrical parameters include a collector-emitter voltage of 50V, a collector current of 100mA, and a total power dissipation of 150mW at 25°C. The transition frequency is 150MHz, and the input resistance R1 is typically 22kΩ. This component is designed for digital circuits.
Verify the exact ordering suffix against Panasonic's official documentation to confirm availability status. The datasheet indicates this product falls under maintenance or discontinued categories. Confirm the specific lifecycle stage before procurement planning.
Select this component when space-saving dual NPN configurations are required for standard digital logic applications. Ensure the design operates within the 150mW total power dissipation limit at the expected ambient temperature. Verify that the 50V collector-emitter voltage rating meets the circuit requirements.
This part belongs to the UNR2212 series of composite transistors manufactured by Panasonic Electronic Components. It is a silicon NPN epitaxial planar type device intended for general electronic equipment such as office and communications gear.
Consult Panasonic's official substitution list for verified alternatives. Cross-reference pinouts and electrical characteristics carefully if considering generic equivalents.