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The Panasonic XP04213 is a composite transistor featuring two NPN elements with built-in bias resistors in an SMini6-G1 package. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per element. The device includes internal resistors R1 (47kΩ) and R2, maintaining a resistance ratio between 0.8 and 1.2. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 80 at 5mA, a transition frequency of 150MHz, and a total power dissipation rating of 150mW.
Verify the current lifecycle status directly through official Panasonic channels before design finalization. The component datasheet indicates maintenance or discontinuation stages. Confirm availability and lead times with authorized distributors to ensure supply continuity for production requirements.
Select this component for applications requiring dual NPN switching with integrated base biasing. Ensure the design accommodates the 150mW total power dissipation limit and the specific 47kΩ input resistance values. Verify that the SMini6-G1 package dimensions fit the target PCB layout constraints.
This part belongs to the XN/XN series of composite transistors manufactured by Panasonic Industrial Devices. These devices are designed to replace discrete resistor-transistor networks, offering space savings in digital logic and interface circuits.
Consult the official Panasonic replacement list for verified substitutes. Cross-reference pinouts and electrical ratings carefully when considering alternative manufacturers' components.
It contains two NPN transistors with built-in bias resistors (R1 and R2) in a single package.
The maximum collector-emitter voltage (VCEO) is 50V.
The typical value for the input resistor R1 is 47 kΩ.