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The XP04314 is a composite transistor array containing one silicon NPN epitaxial planar transistor (Tr1) and one silicon PNP epitaxial planar transistor (Tr2) within a single SMini6-G1 package. Each element incorporates a built-in bias resistor with a typical value of 10 kΩ and a resistance ratio of approximately 0.21. The device supports a maximum collector current of 100 mA per element and a total power dissipation of 150 mW. It operates with a collector-emitter voltage rating of ±50 V, a forward current transfer ratio (hFE) minimum of 80, and transition frequencies of 150 MHz for the NPN and 80 MHz for the PNP section.
Verify component status as the datasheet indicates maintenance or discontinuation stages. Confirm availability through official Panasonic channels or authorized distributors before finalizing design specifications. Ensure compliance with RoHS directives and check for updated product standards at the time of purchase.
Select this component when space-constrained designs require paired NPN/PNP switching elements with integrated base resistors. Verify that the required transition frequency and saturation voltage characteristics align with the specific digital circuit requirements. Ensure the total power dissipation limits are respected under expected ambient temperature conditions.
This part belongs to the UNR series of pre-biased transistors, specifically combining the functions of UNR2214 and UNR2114. It is designed for general electronic equipment where simplified circuit layouts and reduced component counts are prioritized over high-power handling capabilities.
Direct functional equivalents include the UNR2214 and UNR2114 discrete components used separately. Check Panasonic's official replacement list for updated part numbers if this specific model is discontinued.