SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic XP0431N is a composite transistor featuring an NPN epitaxial planar type (Tr1) and a PNP epitaxial planar type (Tr2) integrated into a single SMini6-G1 package. Designed for digital circuits, it incorporates built-in bias resistors with a nominal value of 4.7 kΩ and a resistance ratio of 0.1. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA per element. Total power dissipation is rated at 150 mW at 25°C ambient temperature. Transition frequencies are specified at 150 MHz for the NPN section and 80 MHz for the PNP section.
Verify component authenticity through authorized Panasonic distributors or official channels. Confirm the specific revision status and lifecycle stage via Panasonic's semiconductor website prior to procurement. Ensure compliance with RoHS directives as stated in the datasheet. Validate that the SMini6-G1 package dimensions match the target PCB footprint during final design review.
Select this component when space constraints require dual complementary switching elements in a minimal footprint. Verify that the 100 mA current rating and 150 mW power dissipation meet the thermal requirements of the application. Consider the 4.7 kΩ internal resistance for base drive calculations. Ensure operating temperatures remain within the -55°C to +150°C storage range and appropriate junction limits during operation.
The XP0431N belongs to Panasonic's series of composite transistors designed to replace discrete resistor-transistor networks. It serves as a direct functional replacement for combinations like UNR221N and UNR211N. This integration strategy reduces board space and assembly costs while maintaining reliable performance in standard digital electronics.
Publicly confirmed substitute part numbers include UNR221N and UNR211N. Verify pin compatibility and electrical parameters against the original design requirements before substitution.
The device includes built-in bias resistors with a typical value of 4.7 kΩ, allowing for a ±30% tolerance range.
The NPN transistor (Tr1) has a transition frequency of 150 MHz, while the PNP transistor (Tr2) operates at 80 MHz.
The total power dissipation for the entire package is rated at 150 mW at an ambient temperature of 25°C.