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The XP0611300L is a composite transistor manufactured by Panasonic Electronic Components, featuring two integrated PNP elements within a single SMini6-G1 package. It operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA per element. The device incorporates built-in base resistors (R1) with a nominal value of 47 kΩ and an emitter resistor (R2) ratio of 1.0. Key electrical characteristics include a forward current transfer ratio (hFE) of 80 at -5 mA and a transition frequency (fT) of 80 MHz. Total power dissipation is rated at 150 mW, making it suitable for digital circuit applications requiring space-efficient dual-transistor solutions.
Verify the component status as discontinued or maintenance planned through official Panasonic channels before finalizing designs. Confirm that replacement components meet all absolute maximum ratings and electrical specifications required for the specific application environment.
Select this component when a dual PNP configuration with integrated biasing resistors is required in a minimal footprint. Ensure the design accommodates the -50 V voltage rating and 150 mW total power dissipation limits under expected operating temperatures.
This part belongs to the XP06113 series of silicon PNP epitaxial planar composite transistors designed specifically for digital circuits. The series utilizes the SMini6-G1 package to provide a cost-effective solution for applications needing multiple discrete transistor functions in a reduced area.
Direct substitutes include DDA144EU-7-F from Diodes Incorporated and UMB2NTN from Rohm Semiconductor. Verify pinout compatibility and electrical parameters against the original datasheet requirements.
The input resistance (R1) has a nominal value of 47 kΩ with a tolerance of ±30%. The resistance ratio between R1 and R2 is nominally 1.0.
The transition frequency (fT) is specified as 80 MHz, measured at a collector-base voltage of -10 V and an emitter current of 1 mA.