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The XP0621000L is a composite transistor featuring two NPN elements integrated into a single SMini6-G1 package. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per element. The device includes built-in base resistors (4.7kΩ) to simplify circuit design. Key electrical characteristics include a transition frequency of 150MHz, a DC current gain (hFE) minimum of 160 at 5mA, and a total power dissipation rating of 150mW. Designed for digital circuits, it offers a compact footprint suitable for surface-mount assembly.
Verify the specific lifecycle status directly with Panasonic Industry before procurement planning. Official documentation indicates this product falls under maintenance or discontinued categories. Confirm availability through authorized distribution channels and ensure compliance with RoHS directives applicable to your region. Request the latest Product Standards to validate specifications prior to finalizing orders.
Select this component when dual NPN switching with integrated biasing is required in a minimal footprint. Ensure the 50V collector-emitter voltage and 100mA current limits accommodate the target load. Verify that the 150mW total power dissipation rating supports the thermal environment. Consider the 4.7kΩ internal base resistance for drive compatibility. Review absolute maximum ratings to prevent exceeding junction temperature limits during operation.
This component belongs to the XP0621 series of composite transistors manufactured by Panasonic Industry. The series utilizes silicon NPN epitaxial planar technology optimized for digital circuit applications. These devices are designed to replace multiple discrete components, thereby reducing assembly costs and improving reliability in standard electronic equipment such as office machines and household appliances.
Consult official Panasonic resources for verified substitute part numbers. Cross-referencing requires matching the SMini6-G1 package, 50V/100mA ratings, and dual NPN configuration. Verify pinout compatibility and internal resistor values to ensure functional equivalence in existing designs.