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XP3N1R8MT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is FET N-CH 30V 40.6A 165A PMPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for XP3N1R8MT
- Description：FET N-CH 30V 40.6A 165A PMPAK
- Series：XP3N1R8
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：40.6A (Ta), 165A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.89mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4850 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta), 83.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PMPAK® 5 x 6
- Package / Case：8-PowerLDFN
Single FETs, MOSFETs datasheet and documents for XP3N1R8MT
Single FETs, MOSFETs Overview
The XP3N1R8MT is a single N-channel enhancement mode silicon MOSFET from the YAGEO XSEMI XP series. It features a PMPAK-5x6 surface-mount package and supports a drain-source voltage of 30V with a continuous drain current rating of 165A. The device exhibits a maximum on-resistance of 1.89mΩ, enabling efficient power switching in high-current applications.
Single FETs, MOSFETs Feature Summary
- High current handling capability for robust power delivery
- Low on-state resistance for improved energy efficiency
- Compact surface-mount packaging for automated assembly
Single FETs, MOSFETs Applications
- Power supply modules
- Motor control circuits
- DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions match specific production batches to ensure parameter consistency. Request material traceability documentation for quality assurance compliance before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when high continuous current capacity is required within a compact footprint. Evaluate thermal management requirements based on the specified power dissipation limits. Ensure gate drive voltages remain within the absolute maximum ratings to prevent device degradation during operation.
Single FETs, MOSFETs Part Context
This part belongs to the XP series of power MOSFETs designed for cost-effective and efficient power conversion solutions. The series utilizes advanced silicon processing technologies to achieve low on-resistance values while maintaining reliable performance across standard operating temperature ranges for industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 30V N-channel MOSFETs in the PMPAK-5x6 package having comparable current ratings and on-resistance specifications. Verify pinout compatibility and thermal characteristics before substituting to ensure circuit integrity.
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