XP4NAR95CMT-A

Single FETs, MOSFETs Overview

The XP4NAR95CMT-A is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSEMI. It features a maximum drain-source voltage (Vdss) of 45 V and a continuous drain current (Id) of 49 A at 25°C ambient temperature, with a pulsed current capacity of 223 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.4 milliohms when driven at 10 V with a 20 A load. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 3 V max at 250 µA, a total gate charge (Qg) of 75.2 nC at 4.5 V, and an input capacitance (Ciss) of 7200 pF at 20 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an 8-PMPAK surface-mount package.

Single FETs, MOSFETs Feature Summary

• Provides low conduction losses through a minimized on-resistance characteristic optimized for high-current switching applications.
• Supports robust thermal management capabilities with significant power dissipation ratings under both ambient and case conditions.
• Features fast switching performance facilitated by controlled gate charge and capacitance values for efficient drive requirements.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring high efficiency and compact form factors
• Motor driver stages for controlling DC motors in industrial or automotive systems
• Power supply output stages for server and telecommunications equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Cross-reference the component marking with the official documentation to prevent counterfeit substitution during sourcing.

Single FETs, MOSFETs Selection Notes

Select this component based on its 45 V voltage rating and 49 A continuous current capability relative to the system's peak load requirements. Evaluate the thermal resistance characteristics of the 8-PMPAK package against the available PCB copper area to ensure adequate heat dissipation. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel and minimize resistive heating.

Single FETs, MOSFETs Part Context

This component belongs to the XP4NA series of N-channel Power MOSFETs from YAGEO XSEMI. The series is designed for general-purpose power switching applications where low on-resistance and high current handling are critical. The PMPAK package offers a balance between thermal performance and space-saving surface mount integration compared to traditional leaded packages.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage allowed for the XP4NAR95CMT-A?

The absolute maximum rating for the gate-source voltage (Vgs) is ±20 V.

How does the on-resistance vary with gate drive voltage?

The specified maximum on-resistance of 1.4 milliohms is measured at a gate-source voltage of 10 V. Lower gate voltages may result in higher resistance.