SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Z0402MH is a 4 A Triac housed in a compact through-hole IPAK package. This four-quadrant device supports repetitive peak off-state voltages of 600 V and non-repetitive peak off-state voltages of 750 V. It features a maximum junction temperature of 125 °C and a gate trigger current (IGT) of 3 mA. The component handles an RMS on-state current of 4 A and a non-repetitive surge peak on-state current of 16 A for 16.7 ms cycles. It includes halogen-free molding, lead-free plating, and complies with ECOPACK2 standards.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and environmental compliance grade. Confirm that the IPAK tube packaging aligns with assembly requirements. Cross-reference the latest datasheet revision to validate electrical parameters before finalizing procurement specifications.
Select this component when a robust through-hole solution is required for AC load control applications up to 4 A. Ensure the circuit design accommodates the 600 V blocking voltage and the 3 mA gate trigger current. Verify that the thermal management strategy supports the specified junction temperature limits under full load conditions.
This part belongs to the STMicroelectronics Z04 series of thyristors, designed for general-purpose AC switching. It shares family characteristics such as the 4 A current rating and 600 V/750 V voltage ratings with other variants like the Z0402MB and Z0410MH, differing primarily in package style and gate sensitivity.
Direct replacements include the Z0402MB for surface mount integration or the Z0410MH for higher gate sensitivity requirements. Verify pin compatibility and thermal resistance differences when substituting across package types.
The Z0402MH can withstand a non-repetitive surge peak on-state current of 16 A for a 16.7 ms duration at an initial junction temperature of 25 °C.
Yes, the Z0402MH is a four-quadrant Triac, allowing triggering in both positive and negative gate current polarities relative to the main terminal polarity.
The critical rate of rise of on-state current (dl/dt) is specified as 50 A/µs at a junction temperature of 125 °C.