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The ZDT6718TA is a complementary medium power high gain transistor pair manufactured by Diodes Incorporated. It integrates an NPN and a PNP bipolar junction transistor within a single SM-8 surface-mount package. The NPN section supports a continuous collector current of 2A with a collector-emitter breakdown voltage exceeding 45V. The PNP section provides a continuous collector current of -2A and a breakdown voltage greater than -40V. Both transistors are designed for low saturation voltages, ensuring efficient switching performance in medium power applications.
This component belongs to the ZDT series of complementary medium power transistors from Diodes Incorporated. These devices are engineered to replace discrete dual-transistor setups, saving board space and simplifying assembly. The SM-8 package offers robust thermal performance suitable for industrial and consumer electronics requiring reliable medium-power switching.
Public confirmed substitute part numbers include ZDT6790TA and ZDT6753. Verify pinout compatibility and specific voltage/current ratings against the original design requirements before substitution.