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The ZDT6758TA is a complementary medium power transistor array from Diodes Incorporated, featuring an NPN and PNP die in an SM-8 (SOT-223) package. It provides a collector-emitter voltage of 400 V and continuous collector current of 0.5 A for both polarities. The device offers a total power dissipation of 2.75 W when both dies are active equally at 25°C ambient temperature. Electrical characteristics include a transition frequency of 50 MHz and saturation voltages ranging from 0.25 V to 0.5 V depending on current levels. Operating temperatures span from -55°C to +150°C.
Verify the specific suffix TA against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure compatibility with existing PCB footprints for the SM-8 package before procurement. Confirm RoHS compliance status through the latest datasheet revision.
Select this component for designs requiring high voltage isolation between complementary transistors in a compact form factor. Evaluate thermal management requirements carefully, as power dissipation derates significantly above 25°C. Compare transition frequency and saturation voltage parameters against circuit speed and efficiency requirements.
This part belongs to the ZDT6758 series of complementary medium power transistors manufactured by Diodes Incorporated. The series utilizes silicon technology and is designed for robust performance in high-voltage environments. The SM-8 package provides efficient heat dissipation relative to its small footprint.
Check for direct pin-compatible alternatives from Diodes Incorporated or other manufacturers offering similar 400V complementary arrays in SOT-223 packages. Verify that replacement parts match the electrical characteristics, particularly breakdown voltages and thermal resistance values.