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Product Detailed Parameters
- Description：TRANS NPN/PNP 45V 40V 2A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：2A
- Voltage - Collector Emitter Breakdown (Max)：45V, 40V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 1A / 750mV @ 50mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 1A, 2V / 300 @ 10mA, 2V
- Power - Max：2.75W
- Frequency - Transition：150MHz, 100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZDT6790TA is a complementary medium power high gain transistor array manufactured by Diodes Incorporated. It integrates one NPN and one PNP bipolar junction transistor within an SM-8 (SOT-223) surface-mount package. The NPN device supports a collector-emitter voltage of 45V, continuous current of 2A, and a transitional frequency of 150MHz. The PNP device provides a collector-emitter voltage of -40V, continuous current of -2A, and a transitional frequency of 100MHz. Both transistors are qualified to AEC-Q101 standards for automotive reliability.
Feature Summary
- Complementary NPN/PNP configuration in a single compact SM-8 package
- High DC current gain optimized for medium power applications
- Qualified to AEC-Q101 standards for high reliability
- Lead-free finish with halogen and antimony-free green compound
Applications
- Automotive electronic control units
- General-purpose switching circuits
- Driver stages for motor or relay loads
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets RoHS directives and REACH requirements for the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a matched complementary pair is required for push-pull or bridge configurations. Evaluate thermal resistance values under actual PCB copper area conditions. Verify that the operating temperature range aligns with system environmental constraints.
Part Context
This part belongs to the ZDT6790 series of complementary medium power transistors. It utilizes a molded plastic case with matte tin plated leads. The marking code T6790 identifies the product type on the package surface.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout compatibility and absolute maximum ratings before implementation.
FAQ
What is the maximum collector-base breakdown voltage for the NPN transistor?
The maximum collector-base breakdown voltage (BVCBO) for the NPN transistor is 45V.
What is the typical input capacitance for the PNP transistor?
The typical input capacitance (Cibo) for the PNP transistor is 225pF at VEB = -0.5V and f = 1MHz.
How is the SM-8 package thermally characterized?
The thermal resistance from junction to ambient is 55°C/W for one active die and 60°C/W for both dies active. Thermal resistance from junction to lead is 30°C/W.
