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The ZDT694TC is a dual NPN medium power high gain transistor manufactured by Diodes Incorporated, housed in an SM-8 package. It features a collector-emitter breakdown voltage (BVCEO) of 120V and supports a continuous collector current (IC) of 0.5A. The device provides a DC current transfer static ratio (hFE) exceeding 400 at 200mA. Electrical characteristics include a collector-base breakdown voltage of 120V, emitter-base breakdown voltage of 7V, and a transitional frequency (fT) of 130MHz. Thermal resistance from junction to ambient is 55.6°C/W for single die operation.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details such as reel size or tape width. Confirm RoHS compliance status and environmental declarations directly with the manufacturer. Ensure that the selected variant meets all applicable automotive qualification standards if intended for IATF 16949 certified facility production environments.
Evaluate thermal management requirements based on the specified junction-to-ambient thermal resistance values under steady-state conditions. Consider the peak pulse current limitations when designing for transient load scenarios. Verify that the operating temperature range aligns with the system's environmental constraints and that ESD protection measures meet the required JEDEC classification levels.
This component belongs to the ZDT series of dual transistors offered by Diodes Incorporated. The SM-8 package provides a compact footprint suitable for space-constrained printed circuit board layouts. The datasheet indicates this part is not recommended for new designs; engineers should consult the manufacturer for updated alternatives or legacy support options.
Consult Diodes Incorporated for officially confirmed substitute part numbers. Do not assume functional equivalence with other dual NPN transistors without verifying pinout compatibility, electrical ratings, and package dimensions against the original specifications.