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The ZDT705TA is a dual PNP medium power Darlington transistor manufactured by Diodes Incorporated. It features two independent PNP Darlington pairs within an SM-8 (SOT-223) package. The device supports a continuous collector current of -1 A and withstands a collector-emitter voltage of -120 V. Key electrical parameters include a transition frequency of 160 MHz, static forward current transfer ratios ranging from 2K to 30K depending on operating conditions, and a total power dissipation capability of up to 2.75 W when both dies are active. The component operates across a temperature range of -55°C to +150°C.
Verify the specific suffix 'TA' against the manufacturer's official documentation to confirm packaging details and reel specifications. Ensure that the SM-8 footprint matches the target PCB design constraints. Cross-reference thermal resistance values with actual board copper area requirements to maintain safe operating temperatures during operation.
Select this component when a dual PNP Darlington configuration is required within a single surface-mount package. Consider the 160 MHz transition frequency for moderate-speed switching applications. Evaluate the thermal characteristics carefully, as power dissipation depends significantly on whether one or both internal dies are utilized simultaneously.
The ZDT705 belongs to the SM-8 series of dual medium power Darlington transistors produced by Diodes Incorporated. This series provides integrated solutions for applications needing multiple high-gain switching elements in a compact form factor. The device utilizes the SOT-223 outline to facilitate efficient heat dissipation while maintaining a small board footprint.
Public confirmed substitute part numbers: FCX705TA
The maximum collector-emitter voltage (VCEO) is rated at -120 V.
Total power dissipation is 2.25 W if any single die is on, and increases to 2.75 W if both dies are on equally.
The transition frequency (fT) is typically 160 MHz under conditions of IC=-100mA and VCE=-10V.