ZHB6718TC

Overview

The ZHB6718TC is a bipolar junction transistor (BJT) H-bridge array manufactured by Diodes Incorporated, housed in an SM-8 (SOT-223) surface-mount package. It integrates two NPN and two PNP transistors to facilitate high-current switching applications. The device supports a continuous collector current of 2.5A with a collector-emitter breakdown voltage exceeding 20V for the NPN section. Key electrical parameters include a maximum power dissipation of 1.25W, a transitional frequency of up to 140MHz for NPN and 180MHz for PNP, and low saturation voltages such as VCE(sat) below 200mV at -1A for the PNP transistor.

Feature Summary

• Integrated H-Bridge Configuration: Combines two NPN and two PNP transistors into a single compact package to simplify circuit design for motor control and bridge switching applications.
• Automotive Reliability: Qualified to AEC-Q101 standards, ensuring high reliability and robust performance suitable for demanding automotive environments.
• Low Saturation Voltage: Features optimized low VCE(sat) characteristics to minimize conduction losses and improve overall system efficiency during operation.

Applications

• DC Motor Control Systems
• Automotive Lighting Circuits
• Power Switching Applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before purchase. The 'C' suffix may indicate a specific packaging variant or revision not explicitly detailed in the standard datasheet table. Confirm RoHS compliance and halogen-free status requirements with the supplier to ensure alignment with project specifications.

Selection Notes

Select this component when a compact H-bridge solution is required for currents up to 2.5A. Ensure the thermal management design accounts for the 1.25W power dissipation limit in the SM-8 package. Verify that the operating voltage remains within the 20V breakdown limits for both NPN and PNP sections under all expected load conditions.

Part Context

The ZHB6718 belongs to Diodes Incorporated's portfolio of bipolar transistor arrays designed for efficient power switching. It serves as a discrete alternative to integrated motor driver ICs, offering flexibility for custom H-bridge topologies while maintaining automotive-grade reliability through AEC-Q101 qualification.

Replacement Considerations

Direct substitutes must match the SM-8 package, 2.5A current rating, and H-bridge configuration. Verify pinout compatibility and thermal resistance values. Consult the manufacturer's cross-reference list for approved alternatives with identical electrical characteristics.

FAQ

What is the maximum continuous collector current for the ZHB6718?

The maximum continuous collector current (IC) is 2.5A for both the NPN and PNP transistors within the array.

Is the ZHB6718 qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive environments.

What is the typical saturation voltage for the PNP transistor at -1A?

The collector-emitter saturation voltage (VCE(sat)) for the PNP transistor is less than -200mV when the collector current is -1A.