ZMV835BTA

Overview

The ZMV835BTA is a silicon hyperabrupt varactor diode from the 830 series, designed for frequency control and filtering applications. It features closely controlled capacitance-voltage (CV) characteristics and high Q-factor performance. The device operates with low reverse current to ensure minimal phase noise. Electrical specifications at 25°C include a nominal capacitance of 68 pF (range 64.6–71.4 pF) measured at 2V reverse bias and 1MHz frequency. The minimum quality factor is 100 at 3V reverse bias and 50MHz. The capacitance ratio (C2/C20) is between 5.0 and 6.5 at 1MHz. Absolute maximum ratings specify a forward current of 200 mA and a power dissipation of 330 mW in SOT-23 or SOD-323 packages.

Feature Summary

• Hyperabrupt junction design providing high tuning ratios
• Low reverse leakage current typically around 200pA
• Excellent phase noise performance suitable for precision oscillators
• High Q-factor characteristics across operating frequencies

Applications

• Voltage Controlled Crystal Oscillators (VCXO)
• Temperature Compensated Crystal Oscillators (TCXO)
• Wireless communications systems
• Mobile radio equipment

Procurement Notes

Verify component authenticity by checking manufacturer markings against official order code tables. Confirm package type matches the specific reel configuration required for assembly. Ensure handling procedures account for electrostatic discharge sensitivity inherent to semiconductor devices. Cross-reference datasheet revision dates to confirm specification validity prior to integration into final designs.

Selection Notes

Select this component when steep capacitance-voltage slopes are required for wide tuning ranges. Compare against the 12V hyperabrupt range if higher voltage operation is necessary. Evaluate thermal constraints based on the selected surface mount package, as power dissipation limits vary between SOT-23, SOD-323, and SOD-523 configurations. Verify that the nominal capacitance aligns with the target oscillator frequency requirements.

Part Context

This part belongs to the Zetex 830 series of silicon hyperabrupt varactor diodes. The series includes single and dual common cathode formats available in miniature surface mount packages. Other variants in the family offer different nominal capacitance values ranging from approximately 7pF to 100pF, allowing designers to tune circuit parameters without changing the physical footprint.

Replacement Considerations

Direct substitutes within the same series include ZMV834BTA and ZMV836BTA, which share identical packaging but differ in nominal capacitance values. For applications requiring higher breakdown voltages, the 12V hyperabrupt range such as ZMV930 may be considered, though pin compatibility and electrical characteristics must be verified.