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The ZTD09N50DE6QTA is a dual NPN bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 1A. The device exhibits a low saturation voltage of 270mV at 50mA base and 1A collector current, with a minimum DC current gain of 200 at 500mA. Operating within a temperature range of -55°C to 150°C, it utilizes an SOT-23-6 surface-mount package. Key electrical characteristics include a transition frequency of 215MHz and a maximum power dissipation of 1.1W.
Verify the manufacturer part number against official Diodes Incorporated documentation to confirm authenticity. Ensure the component matches the specified SOT-23-6 package and electrical parameters. Check for RoHS compliance markings on the packaging. Confirm the date code and lot traceability align with project requirements before integration into production lines.
Select this component when a dual NPN transistor is required in a small surface-mount footprint. The 50V breakdown voltage suits low-voltage digital and analog circuits. Consider the 1A current limit and 1.1W power dissipation for thermal management. Verify that the SOT-23-6 pinout matches the target PCB layout design constraints.
This component belongs to the ZTD series of dual transistors from Diodes Incorporated. These devices are designed for general-purpose switching and amplification tasks. The dual configuration allows for space-saving designs in portable electronics and consumer appliances where multiple identical transistor functions are needed in a single package.
Publicly confirmed substitute part numbers were not identified in the provided source material. Consult official manufacturer cross-reference lists or distributor databases for verified alternatives if this specific part number is unavailable.