ZTX325STZ

Overview

The ZTX325STZ is an NPN silicon planar RF transistor manufactured by Diodes Incorporated. It operates in the E-Line (TO-92 compatible) through-hole package. Key electrical parameters include a collector-emitter voltage of 15 V, a transition frequency up to 1.3 GHz at 25 mA, and a maximum power dissipation of 350 mW. The device exhibits a noise figure of 5.0 dB at 500 MHz and supports an output power of 175 mW under specified conditions.

Feature Summary

• High transition frequency capability reaching 1.3 GHz for RF applications
• Low noise performance with a 5.0 dB noise figure at 500 MHz
• Optimized for high output power delivery of 175 mW

Applications

• RF amplifier circuits
• Low noise amplification stages
• High-frequency signal processing systems

Procurement Notes

Verify component authenticity against official datasheets before integration. Confirm package compatibility and thermal requirements match design specifications. Ensure operating conditions remain within absolute maximum ratings to prevent device failure. Check for obsolescence status prior to finalizing procurement plans.

Selection Notes

Select this component for designs requiring high-speed switching and low noise characteristics in the RF spectrum. Evaluate thermal management needs as power dissipation reaches 350 mW. Consider the E-Line package constraints for PCB layout and ensure biasing circuits support the specified current ranges for optimal gain and frequency response.

Part Context

This part belongs to the ZTX series of bipolar junction transistors designed for radio frequency applications. It utilizes silicon planar technology to achieve high transition frequencies and low noise figures. The E-Line packaging provides a through-hole mounting solution compatible with standard TO-92 footprints, facilitating integration into legacy and new RF hardware designs.

Replacement Considerations

No verified public substitute part numbers are documented for the ZTX325STZ.