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Product Detailed Parameters
- Description：IC SWITCH SP4T X 1 55KOHM 16SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Switch Circuit：SP4T
- Multiplexer/Demultiplexer Circuit：4:01
- On-State Resistance (Max)：-
- Channel-to-Channel Matching (ΔRon)：-
- Voltage - Supply, Single (V+)：4.75V ~ 5.25V
- Voltage - Supply, Dual (V±)：±4.75V ~ 5.25V
- Switch Time (Ton, Toff) (Max)：35ns, 10ns
- -3db Bandwidth：300MHz
- Charge Injection：-
- Channel Capacitance (CS(off), CD(off))：-
- Current - Leakage (IS(off)) (Max)：-
- Crosstalk：-75dB @ 10MHz
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：16-SOP
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The ZXFV301N16TC is a dual N-channel MOSFET manufactured by Diodes Incorporated, housed in an SOT-363 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 310 mA. The device exhibits a maximum on-resistance of 2.5 ohms at a gate-source voltage of 4.5 V. Operating characteristics include a gate threshold voltage range of 0.8 V to 2.5 V and a total gate charge of 3 nC. Thermal performance is defined by a power dissipation rating of 375 mW and a junction temperature operating range from -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement mode transistors within a compact footprint.
- Low gate charge capability designed to facilitate efficient switching operations in high-frequency applications.
- Enhanced thermal stability supporting reliable operation across extended industrial temperature ranges.
Applications
- Battery protection circuits requiring dual-switch isolation or control.
- Load switching applications in portable consumer electronics.
- General-purpose signal switching in mobile communication devices.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors prior to procurement planning. Ensure component authenticity through verified supply chain channels.
Selection Notes
Select this component for designs requiring dual N-channel switching with moderate current handling capabilities. Evaluate the 2.5 ohm on-resistance against thermal constraints to ensure power dissipation remains within the 375 mW limit. Verify that the 60 V breakdown voltage provides adequate margin for the target application's supply rails.
Part Context
This component belongs to Diodes Incorporated's portfolio of small-signal MOSFETs optimized for space-constrained printed circuit board layouts. The SOT-363 package allows for high-density mounting suitable for modern miniaturized electronic assemblies. It serves as a discrete solution for low-power switching tasks where integrated circuits may lack sufficient flexibility.
Replacement Considerations
Consult official cross-reference data for equivalent dual N-channel MOSFETs in the SOT-363 package. Verify pinout compatibility and electrical parameter alignment before substituting with alternative manufacturers' components.
