ZXGD3109N8TC

Description：IC GATE DRVR SYNC MOSFET CTL 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:42d69c021217 Category: Gate Drivers Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC GATE DRVR SYNC MOSFET CTL 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Driven Configuration：-
Channel Type：Synchronous
Number of Drivers：1
Gate Type：MOSFET (N-Channel)
Voltage - Supply：4.5V ~ 12V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：5A, 5A
Input Type：-
Rise / Fall Time (Typ)：42ns, 42ns
Operating Temperature：-40°C ~ 125°C
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

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ZXGD3109N8TC

Overview

The ZXGD3109N8TC is a synchronous MOSFET controller manufactured by Diodes Incorporated. It operates within an ambient temperature range of -40°C to +150°C and utilizes a surface-mount SOIC-8 package. The device is classified under PMIC gate drivers and employs silicon technology. Factory packaging quantities are specified as 2,500 units per reel.

Feature Summary

Synchronous MOSFET control functionality
High-temperature operational capability up to 150°C

Applications

Power management IC applications
Gate driver circuits

Procurement Notes

Verify current availability status as the component lifecycle is listed as obsolete. Confirm RoHS compliance details through official documentation before integration. Check for authorized distribution channels as standard supply may be restricted.

Selection Notes

Select this component for designs requiring high-temperature resilience in power management systems. Ensure compatibility with SOIC-8 surface mount assembly processes. Validate that the synchronous control architecture meets specific circuit requirements.

Part Context

This part belongs to the Diodes Incorporated gate driver product line within the PMIC category. It serves as a specialized controller for managing synchronous MOSFET operations in power conversion topologies.