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The ZXMD63N02XTC is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and operates within a temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 2.5A at 25°C with an on-state resistance (RDS(ON)) of 130mΩ at VGS=4.5V, or 150mΩ at VGS=2.7V. Packaged in an MSOP-8 surface-mount case, it offers a power dissipation of 0.87W and utilizes a matte tin finish for terminals.
Verify the specific ordering suffix 'C' against official documentation to confirm the 4,000-unit reel quantity. Confirm compliance requirements such as RoHS 3 and REACH status before procurement. Ensure that the component's end-of-life status does not conflict with long-term production schedules.
Select this component for low-voltage power management where compact packaging is required. Evaluate thermal constraints carefully, as the MSOP-8 package has limited power dissipation capabilities compared to larger packages. Verify gate drive voltage levels to ensure optimal RDS(ON) performance during operation.
This part belongs to the ZXMD63 series of dual N-channel MOSFETs from Diodes Incorporated. The datasheet explicitly states that the ZXMD63N02X series is not recommended for new designs and has no alternate part provided by the manufacturer.
The official datasheet specifies that there is no alternate part available for this component. Engineers must evaluate existing inventory or redesign circuits if this obsolete component is required for continued production.