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The ZXMS6002GQTA is a self-protected, enhancement mode Intelligent MOSFET from Diodes Incorporated. It features an N-channel configuration with a maximum load voltage of 60V and a typical on-resistance of 385 milliohms. The device supports a maximum output current of 1.6A in a low-side switch topology. It operates within a junction temperature range of -40°C to 150°C and utilizes a SOT-223 package.
Verify component status as the ZXMS6002GQTA is listed as no longer manufactured. Confirm availability through authorized distributors or secondary markets. Ensure compliance with RoHS directives and check for any applicable tariffs if shipping to specific regions. Validate that the SOT-223 package matches the design requirements.
Select this component for applications requiring integrated protection in a compact surface-mount package. The 60V rating and 1.6A current capacity suit moderate power loads. Consider the fixed current limit and thermal shutdown characteristics when designing for harsh environments. Verify compatibility with non-inverting logic interfaces.
This part belongs to the IntelliFET series by Diodes Incorporated, designed for robust power management. It combines a MOSFET with intelligent control circuitry to simplify system design. The series targets automotive and industrial sectors where reliability and space efficiency are critical.
Check for direct pin-compatible substitutes within the same IntelliFET family. Verify that alternative parts meet the AEC-Q101 automotive qualification standard if used in vehicle applications. Ensure equivalent electrical parameters such as Rds(on) and breakdown voltage.