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The ZXMS6004DGQTA is a low-side IntelliFET power switch manufactured by Diodes Incorporated. It integrates an N-channel enhancement mode MOSFET in a SOT-223-3 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, continuous drain current (Id) of 1.3 A, and on-resistance (Rds(on)) of 500 mΩ. The device features a gate-source threshold voltage of 1.5 V and supports a junction temperature range from -40°C to +150°C with a power dissipation of 1.3 W.
Verify the specific suffix 'DGQTA' against official Diodes Incorporated documentation to confirm tape-and-reel packaging and lead-free status. Ensure compatibility with SOT-223-3 footprint requirements. Confirm RoHS compliance and REACH SVHC declarations via the manufacturer's latest datasheet before procurement.
Select this component for circuits requiring integrated fault protection in a compact surface-mount package. The 60V rating and 1.3A current capacity suit low-power automotive loads. Verify that the 500 mΩ on-resistance meets thermal management requirements for the specific application duty cycle.
This part belongs to the IntelliFET family of self-protected power switches from Diodes Incorporated. These devices combine MOSFET technology with intelligent control circuitry to provide robust protection against common failure modes in power distribution systems.
Check pinout compatibility with existing designs. Verify that substitute parts maintain similar Vds, Id, and Rds(on) specifications. Ensure alternative components support the required operating temperature range and package type.
The device includes fixed current limiting, overtemperature shutdown, and overvoltage protection with automatic restart capability.
Yes, it is AEC-Q101 qualified for automotive applications.