SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXMS6004SG-13 is a self-protected low-side IntelliFET MOSFET from Diodes Incorporated, housed in an SOT-223-3 package. It features an N-channel enhancement mode configuration with a drain-source breakdown voltage of 60 V and a continuous drain current of 1.3 A. The device exhibits a maximum on-resistance of 500 mOhms and a gate-source threshold voltage of 1.5 V. It supports a power dissipation of 1 W and operates within a temperature range of -40°C to +150°C.
Verify the specific suffix '-13' corresponds to the required tape and reel quantity of 2,500 units as documented by the manufacturer. Confirm that the SOT-223-3 package dimensions align with the target PCB footprint. Ensure the component meets RoHS compliance standards if required by the end application specifications.
Select this component when a single N-channel switch with integrated protection is preferred over discrete solutions. The 60 V rating suits 12 V or 24 V nominal systems. Consider the 500 mOhm resistance for thermal management in high-current scenarios. Verify that the logic-level input voltage matches the available control signal levels.
This part belongs to the IntelliFET series, which combines power switching with diagnostic and protection functions. It serves as a compact alternative to discrete MOSFETs paired with external protection circuits. The SOT-223-3 package offers a balance between current handling capability and board space efficiency.
The ZXMS6004DGTA is a related variant in the same family but features different electrical characteristics such as lower on-resistance. Verify functional equivalence before substitution, as protection thresholds and package types may differ across the IntelliFET lineup.