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The ZXMS6004SGTA is a single N-channel enhancement-mode MOSFET from the IntelliFET series by Diodes Incorporated. It features a 60V drain-source voltage rating and supports a continuous drain current of 1.3A with a maximum on-resistance of 500mΩ. The device operates within a temperature range of -40°C to +150°C junction temperature, offering 1.6W power dissipation in an SOT-223-3 package. Key electrical parameters include a gate-source threshold voltage of 1.5V, rise time of 10µs, fall time of 15µs, and typical off-delay time of 45µs.
Verify component authenticity through authorized Diodes Incorporated distributors or certified supply chain partners. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure storage conditions maintain moisture sensitivity level 1 integrity. Cross-reference datasheet revisions against production date codes to validate parameter consistency.
Select this component when a 60V N-channel switch with integrated fault protection is required. The 500mΩ on-resistance balances conduction losses with cost efficiency. Consider the SOT-223-3 package constraints for thermal management. Verify input voltage levels match the 1.5V threshold requirement for reliable switching operation.
Part of the ZXMS6004 IntelliFET family, designed for high-reliability switching tasks. The SGTA suffix indicates specific packaging and testing standards within the product line. It complements other variants like ZXMS6004FFTA and ZXMS6004DGTA by offering a standardized SOT-223-3 form factor with consistent electrical characteristics across the series.
ZXMS6004SG-13 offers identical electrical specifications but differs in reel quantity (2500 vs 1000). ZXMS6004DGTA provides similar protection features with slightly lower on-resistance (350mΩ) but may require interface verification. ZXMS6004FFTA uses a smaller SOT-23F-3 package with comparable ratings.