ZXMS6005DGQ-13

Overview

The ZXMS6005DGQ-13 is a self-protected low-side IntelliFET MOSFET manufactured by Diodes Incorporated. It features an N-channel silicon construction in a SOT-223-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 2 A, and a maximum on-resistance (Rds(on)) of 200 mΩ at 5 V gate drive. The device supports logic-level inputs with a threshold voltage of 700 mV to 1.5 V. It operates within a temperature range of -40°C to +125°C or +150°C depending on specific rating conditions, with a power dissipation of 3 W. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrates over-temperature shutdown, overcurrent protection, and active clamping for overvoltage protection.
• Features auto-restart capability following fault conditions such as short circuits or thermal overload.
• Supports direct interfacing with 3.3 V and 5 V microcontroller logic levels.
• Includes electrostatic discharge (ESD) protection on input pins.

Applications

• General-purpose switching driven by 3.3 V or 5 V microcontrollers
• Automotive systems requiring AEC-Q101 qualified components
• Low-side load driving in harsh environments

Procurement Notes

Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with required protection features and packaging options. Confirm AEC-Q101 qualification status if automotive compliance is mandatory. Check for RoHS and REACH SVHC compliance documentation prior to integration into final assemblies.

Selection Notes

Select this component when high robustness against electrical faults is required compared to standard discrete MOSFETs. The integrated protection mechanisms reduce external component count. Ensure the application voltage does not exceed 60 V and that the load current remains within the 2 A continuous limit. Verify thermal management requirements given the 3 W power dissipation rating in the SOT-223 package.

Part Context

This part belongs to the ZXMS6005 series of IntelliFET devices from Diodes Incorporated. These are designed as rugged replacements for standard MOSFETs in applications prone to electrical stress. The DGQ variant specifically denotes the SOT-223 package configuration with tape-and-reel packaging options suitable for automated assembly processes.

Replacement Considerations

Direct substitutes within the same family include ZXMS6005SGQ and ZXMS6005N8-13, though package differences exist. Verify pinout compatibility and exact protection thresholds before swapping with other IntelliFET variants.

FAQ

Does the ZXMS6005DGQ-13 support 3.3 V logic control?

Yes, the device features a low gate-source threshold voltage, allowing it to be driven directly by 3.3 V logic signals.

What happens during an over-temperature event?

The device activates thermal shutdown protection and automatically restarts once the junction temperature returns to a safe operating level.